位置:首页 > IC中文资料第8370页 > OM50N05SR

型号 功能描述 生产厂家 企业 LOGO 操作

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

INTERSIL

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

FAIRCHILD

仙童半导体

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

INTERSIL

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

INTERSIL

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

FAIRCHILD

仙童半导体

OM50N05SR产品属性

  • 类型

    描述

  • 型号

    OM50N05SR

  • 功能描述

    50V Single N-Channel Hi-Rel MOSFET in a D2 package

更新时间:2026-8-2 14:32:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RFMD
24+
QFN
6000
RFMD专营品牌原装进口假一赔十
QORVO
2545+
SMD
4560
只做原装正品假一赔十为客户做到零风险!!
KA/INTRISII
22+
TO-
6000
十年配单,只做原装
TI/德州仪器
23+
SOP8
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
XX
23+
SMD0805
50000
全新原装正品现货,支持订货
Essentra Components
25+
电联咨询
7800
公司现货,提供拆样技术支持
BB
24+
SOP
3000
只做原装正品现货 欢迎来电查询15919825718
RFMD
原厂封装
3688
一级代理 原装正品假一罚十价格优势长期供货
XX
SMD0805
5829
全新 发货1-2天
TI
2025+
SOP8
3750
全新原厂原装产品、公司现货销售

OM50N05SR数据表相关新闻

  • OMAPL138BZWT TI

    www.hfxcom.com

    2021-11-15
  • OMAP4430FCBS原装正品公司现货

    OMAP4430FCBS,公司主营军工级高端物料,优势渠道

    2020-7-13
  • OM4085T/F1全新原装现货

    可立即发货

    2019-9-24
  • OM9401SF-32V的5A条单通道高新技术REL的IGBT栅极驱动器在一个F-12A条包

    特征 ·坚固,气密封装 ·内置带故障短路保护输出 ·高共模抑制比光电耦合器 · CMOS / TTL兼容输入接口 描述 这种密封栅极驱动器系列,非常适合用于驱动CERMODTM家庭的IGBT功率模块,在小尺寸,高性能和高可靠性是必需的。专为高功率马达控制,逆变器,开关电源供应器,斩波器和高能量脉冲电路航空航天,国防,交通,工业和医疗设备等行业。

    2013-2-25
  • OM2940-05SM-表面贴装0.5伏大号单程差的正向调节

    特点 •类似的为行业标准的LM2940 •低压差通常0.5V@ IO= 1A •输出电流高达1A •反向电池保护 •内部短路保护 •隔离密封表面贴装封装 描述 这三端固定稳压器的设计提供高1.0A效率。它具有源1A的输出电流能力具有典型的辍学0.5 V和在整个温度范围内最大的1V的电压。它是提供在一个密封的表面贴装封装,非常适合于军事应用小尺寸和高可靠性的要求。

    2013-1-14
  • OM184SC-7.5A,5A,3A,1.5A低压差正可调稳压

    特点 •经营下降到1V差,1.5V@最大。当前 •0.015%的线路调整 •0.01%的负载调节 •1%参考电压 •密封TO- 257和TO- 258隔离包 •电相当于LT1083,84,85和86 描述 这三个终端正可调稳压器的设计提供7.5A,5A,3A,1.5A,具有较高的效率比传统的电压调节器。 “设备的设计操作,以1伏的输入输出差和辍学电压被指定为负载电流的函数。所有器件引脚兼容老式三端稳压器。提供易

    2013-1-14