COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

Intellimod??Module Application Specific IPM (8 Amperes/600 Volts)

Description: Powerex Application Specific IPMs (ASIPMs) are inteligent power modules that integrate power devices, gate drive and protection circuitry in a compact package for use in small inverter applications up to 20kHz. Use of application specific HVICs allow the designer to reduce inverter s

TEMPERATURE SENSOR IC

DESCRIPTION The TK11033 is a temperature sensor IC with a linear output of 5 mV/°C over the range of -30 to + 105 °C. Its wide operating voltage range of 2.4 to 10.0 V makes it suitable for a number of applications requiring accurate temperature control, such as electronic thermostats for climate