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位置：首页 > IC中文资料第845页 > MJ11033

MJ11033晶体管资料

  • MJ11033别名：MJ11033三极管、MJ11033晶体管、MJ11033晶体三极管

  • MJ11033生产厂家：美国摩托罗拉半导体公司

  • MJ11033制作材料：Si-N+Darl+Di

  • MJ11033性质：低频或音频放大 （LF）

  • MJ11033封装形式：直插封装

  • MJ11033极限工作电压：120V

  • MJ11033最大电流允许值：50A

  • MJ11033最大工作频率：<1MHZ或未知

  • MJ11033引脚数：2

  • MJ11033最大耗散功率：300W

  • MJ11033放大倍数：

  • MJ11033图片代号：E-44

  • MJ11033vtest：120

  • MJ11033htest：999900

  • MJ11033atest：50

  • MJ11033wtest：300

  • MJ11033代换 MJ11033用什么型号代替：

MJ11033价格

参考价格：￥33.6520

型号：MJ11033G 品牌：ON 备注：这里有MJ11033多少钱，2026年最近7天走势，今日出价，今日竞价，MJ11033批发/采购报价，MJ11033行情走势销售排行榜，MJ11033报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJ11033

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

MOSPEC

统懋

MJ11033

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

MOTOROLA

摩托罗拉

MJ11033

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

ONSEMI

安森美半导体

MJ11033

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

WINGS

永盛电子

MJ11033

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

SEME-LAB

MJ11033

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A • Complement to Type MJ11032 APPLICATIONS • Designed for use as output devices in complementary general purpose amplifier appli

ISC

无锡固电

MJ11033

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJ11033

Trans Darlington PNP 120V 50A 3-Pin(2+Tab) TO-204 Tray

ETC

知名厂家

MJ11033

BJT 双极性三极管

ETC

知名厂家

MJ11033

Bipolar Junction Transistors

TTELEC

MJ11033

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MJ11033

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MJ11033G

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MJ11033G

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MJ11033G

封装/外壳：TO-204AE 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 120V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

IJ11033H

EMI/EMC FILTER

Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo

DIT

IJ11033S

EMI/EMC FILTER

Features - Ideally suited for products that must conform to part 15, FCC regulations - Metal cased miniature type with high performance - Meet over voltage category II of IEC 60664 and comply with [EC 60950 - Uses IEC connector that meets the safety standards from certification bodies - Bo

DIT

11033

PVC and Nylon LED Spacers

文件：130.419 Kbytes Page：1 Pages

HEYCO

L11033

LONG LIFE XENON LAMP SERIES

文件：121.84 Kbytes Page：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

MJ11033产品属性

  • 类型

    描述

  • 型号

    MJ11033

  • 功能描述

    达林顿晶体管 50A 120V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJ11033供应商更多...

更新时间：2026-3-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJ11033
ON(安森美)
24+
标准封装
7308
全新原装正品/价格优惠/质量保障
询价
深圳市亿联芯电子科技有限公司
MJ11033
ON/安森美
2023+
TO-3
8635
全新原装正品,优势价格
询价
深圳市明嘉莱科技有限公司
MJ11033
M
24+
TO 3
157342
明嘉莱只做原装正品现货
询价
深圳市恒凯威科技开发有限公司
MJ11033G
NUVOTON
21+
TO-3
20000
只做原装,质量保证
询价
深圳市恒达亿科技有限公司
MJ11033
MOT
25+
CAN
3000
全新原装、诚信经营、公司现货销售!
询价
标准国际(香港)有限公司
MJ11033
ON SEMI
25+
5
公司优势库存 热卖中!
询价
深圳市威雅利发展有限公司
MJ11033
MOT
99+
TO
17
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
齐创科技(上海,北京,青岛)有限公司
MJ11033G
ON
23+
TO-3
8000
原装正品,假一罚十
询价
深圳市科恒伟业电子有限公司
MJ11033G
ON
24+
TO-3
8500
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市一线半导体有限公司
MJ11033
MOT
24+
TO-3
10000
询价

MJ11033芯片相关品牌

MJ11033规格书下载地址

MJ11033参数引脚图相关

MJ11033数据表相关新闻

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