General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

■ Higher operating power due to low thermal resistance

■ Low conduction losses due to low on-state resistance

■ Simple gate drive required due to low gate charge

■ Suitable for high frequency applications due to fast switching characteristics

Applications

■ DC-to-DC primary side switching