General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features and benefits

■ High efficiency due to low switching and conduction losses

■ Suitable for logic level gate drive sources

Applications

■ DC-to-DC convertors

■ Notebook computers

■ Portable equipment

■ Switched-mode power supplies