General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

■ Logic level threshold

■ Optimized for use in DC-to-DC converters

■ 100 RG tested

■ Lead-free package

■ Very low switching and conduction losses

■ 100 ruggedness tested

Applications

■ DC-to-DC converters

■ Voltage regulators

■ Switched-mode power supplies

■ PC Motherboards

Quick reference data

■ VDS ≤ 25 V

■ RDSon ≤ 9 mΩ

■ ID ≤ 66 A

■ QGD = 2.7 nC (typ)