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PBSS5130PAP中文资料
PBSS5130PAP数据手册规格书PDF详情
General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
PBSS5130PAP产品属性
- 类型
描述
- 型号
PBSS5130PAP
- 功能描述
两极晶体管 - BJT 30V 1A PNP/PNP lo VCEsat transistor
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
||||
恩XP |
23+ |
30000 |
代理全新原装现货,价格优势 |
||||
恩XP |
23+ |
500 |
全新原装正品现货,支持订货 |
||||
恩XP |
21+ |
原厂封装 |
1975 |
||||
Nexperia(安世) |
24+ |
SOT-1118 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
NEXPERIA/安世 |
22+ |
NA |
81000 |
原装现货 价格优势 |
|||
NEXPERIA |
22+ |
原厂 |
32000 |
||||
Nexperia/安世 |
22+ |
SOT1118 |
60000 |
原厂原装正品现货 |
|||
NEXPERIA/安世 |
2447 |
SOT1118 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IDT |
23+ |
SOP20 |
69820 |
终端可以免费供样,支持BOM配单! |
PBSS5130PAP,115 价格
参考价格：￥1.0114
PBSS5130PAP 资料下载更多...
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NXP相关芯片制造商
Datasheet数据表PDF页码索引
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