General description

PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ Dual low power switches (e.g. motors, fans)

■ Automotive