General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4041NT.

Features and benefits

■ Very low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ High collector current gain (hFE) at high IC

■ High energy efficiency due to less heat generation

■ AEC-Q101 qualified

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ Loadswitch

■ Battery-driven devices

■ Power management

■ Charging circuits

■ Power switches (e.g. motors, fans)