General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4041PZ.

Features and benefits

■ Very low collector-emitter saturation

voltage VCEsat

■ High collector current capability IC and

ICM

■ High collector current gain (hFE) at

high IC

■ High energy efficiency due to less heat

generation

■ AEC-Q101 qualified

■ Smaller required PCB area than for

conventional transistors

Applications

■ Loadswitch

■ Battery-driven devices

■ Power management

■ Charging circuits

■ Power switches (e.g. motors, fans)