DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.

FEATURES

• High power gain

• Low noise figure

• Good thermal stability

• Withstands full load mismatch.