General description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT143B package.

The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium

power applications up to 2 GHz.

Features and benefits

 Low noise, high breakdown RF transistor

 AEC-Q101 qualified

 Minimum noise figure (NFmin) = 0.65 dB at 900 MHz

 Maximum stable gain 20 dB at 900 MHz

 11 GHz fT silicon technology

Applications

 Applications requiring high supply voltages and high breakdown voltages

 Broadband amplifiers up to 2 GHz

 Low noise amplifiers for ISM applications

 ISM band oscillators