N--Channel Enhancement--Mode Lateral MOSFETs

These 32 W RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 1805 to 1880 MHz.

Features

 Designed for Wide Instantaneous Bandwidth Applications

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

 Optimized for Doherty Applications