N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1805 to

1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for PCN--PCS/cellular radio and WLL

applications.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =

1400 mA, Pout = 50 Watts Avg., f = 1807.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01

Probability on CCDF.

Power Gain — 17.5 dB

Drain Efficiency — 31

Device Output Signal PAR — 6.2 dB @ 0.01 Probability on CCDF

ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW

Output Power

• Pout @ 1 dB Compression Point ≃ 170 Watts CW

Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

• Designed for Digital Predistortion Error Correction Systems

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel option, see p. 17.