N−Channel Enhancement−Mode Lateral MOSFET

This 2 W RF power LDMOS transistor is designed for cellular base station

applications covering the frequency range of 728 to 960 MHz.

Features

• Greater negative gate−source voltage range for improved Class C

operation

• On−chip matching (50 ohm input, DC blocked)

• Integrated quiescent current temperature compensation with

enable/disable function (1)

• Integrated ESD protection