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A2T08VD020N_V01中文资料
A2T08VD020N_V01数据手册规格书PDF详情
N−Channel Enhancement−Mode Lateral MOSFET
This 2 W RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 728 to 960 MHz.
Features
• Greater negative gate−source voltage range for improved Class C
operation
• On−chip matching (50 ohm input, DC blocked)
• Integrated quiescent current temperature compensation with
enable/disable function (1)
• Integrated ESD protection
更新时间：2025-12-17 10:03:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
971 |
||||||
恩XP |
25+ |
2QFN-4 |
326 |
就找我吧!--邀您体验愉快问购元件! |
|||
恩XP |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
恩XP |
22+ |
TO270WB6A |
9000 |
原厂渠道,现货配单 |
|||
恩XP |
26+ |
N/A |
60000 |
只有原装 可配单 |
|||
恩XP |
24+ |
NA |
8600 |
正品原装,正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
恩XP |
2021/2022+ |
N/A |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
恩XP |
24+ |
N/A |
6000 |
现货 |
|||
恩XP |
24+ |
N/A |
6000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
恩XP |
25+ |
N/A |
8800 |
公司只做原装,详情请咨询 |
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