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NAND512W3A2CN6F中文资料
NAND512W3A2CN6F数据手册规格书PDF详情
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK® packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
NAND512W3A2CN6F产品属性
- 类型
描述
- 型号
NAND512W3A2CN6F
- 功能描述
闪存 512 MB 528 Byte 264 word pg 1.8V/3V
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
micron(镁光) |
24+ |
标准封装 |
16048 |
全新原装正品/价格优惠/质量保障 |
|||
MICRON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
STMICRON |
24+ |
TSOP |
12000 |
进口原装 价格优势 |
|||
4500 |
24+ |
TSOP48 |
6980 |
原装现货,可开13%税票 |
|||
MICRON 存储芯片 FLAH MCU |
ROHS+ Original 元件 |
原厂原封MICRON |
25852 |
现货原装△-电子元件更多数量咨询样品批量支持;详询 |
|||
ST/MICRON |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
ST/MICRON |
21+ |
TSOP |
10000 |
原装现货假一罚十 |
|||
MICRON |
25+ |
TSOP48 |
4500 |
原厂原装,价格优势 |
|||
ST/MICRON |
08+ |
TSOP |
433 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
NAND512W3A2CN6F 资料下载更多...
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NUMONYX相关芯片制造商
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