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NAND512W3A2CN6F中文资料

厂家型号

NAND512W3A2CN6F

文件大小

1270.65Kbytes

页面数量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

闪存 512 MB 528 Byte 264 word pg 1.8V/3V

数据手册

下载地址一下载地址二

生产厂商

numonyx

简称

NUMONYX

中文名称

官网

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NAND512W3A2CN6F数据手册规格书PDF详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

NAND512W3A2CN6F产品属性

  • 类型

    描述

  • 型号

    NAND512W3A2CN6F

  • 功能描述

    闪存 512 MB 528 Byte 264 word pg 1.8V/3V

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-5-14 14:34:00
供应商 型号 品牌 批号 封装 库存 备注 价格
micron(镁光)
24+
标准封装
16048
全新原装正品/价格优惠/质量保障
MICRON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
STMICRON
24+
TSOP
12000
原装
ST
23+
TSSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
4500
24+
TSOP48
6980
原装现货,可开13%税票
ST/MICR
24+
TSOP
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
MICRON 存储芯片 FLAH MCU
ROHS+ Original 元件
原厂原封MICRON
25852
现货原装△-电子元件更多数量咨询样品批量支持;详询
ST/MICRON
23+
TSOP
50000
全新原装正品现货,支持订货
ST/MICRON
21+
TSOP
10000
原装现货假一罚十
MICRON
25+
TSOP48
4500
原厂原装,价格优势

NUMONYX相关电路图

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  • OHMITE
  • OKAYA

numonyx

中文资料: 4589条

Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产