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NAND512W3A2C中文资料

厂家型号

NAND512W3A2C

文件大小

1270.65Kbytes

页面数量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

闪存 NAND & S.MEDIA FLASH

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

NUMONYX

NAND512W3A2C数据手册规格书PDF详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

NAND512W3A2C产品属性

  • 类型

    描述

  • 型号

    NAND512W3A2C

  • 功能描述

    闪存 NAND & S.MEDIA FLASH

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-10-25 14:53:00
供应商 型号 品牌 批号 封装 库存 备注 价格
Numonyx
6000
面议
19
TSOP48
Numonyx/STMi
23+
48-TSOP
65480
micron(镁光)
24+
标准封装
16048
全新原装正品/价格优惠/质量保障
MICRON/美光
25+
N/A
12496
MICRON/美光原装正品NAND512W3A2CN6E即刻询购立享优惠#长期有货
ST
18+ROHS全新原装
TSSOP
18877
供应元器件代理分销QQ350053121原装特价
ST
22+
TSOP48
9035
原装正品,实单请联系
ST
2021+
TSOP48
6800
原厂原装,欢迎咨询
MICRON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ST
24+
TSSOP
8540
只做原装正品现货或订货假一赔十!
STMICRON
24+
TSOP
12000
进口原装 价格优势