位置:NAND512R3A2CN6F > NAND512R3A2CN6F详情

NAND512R3A2CN6F中文资料

厂家型号

NAND512R3A2CN6F

文件大小

1270.65Kbytes

页面数量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

数据手册

下载地址一下载地址二

生产厂商

numonyx

简称

NUMONYX

中文名称

官网

LOGO

NAND512R3A2CN6F数据手册规格书PDF详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

更新时间:2025-5-15 14:03:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
21+
BGA
10000
原装现货假一罚十
NUMONYX
24+
BGA
204
原装现货假一赔十
NUMONYX
22+
BGA
16800
全新进口原装现货,假一罚十
Numonyx/STMi
23+
63-VFBGA
65480
ST
24+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
Micron Technology Inc.
21+
144-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
STM
23+
BGA
30000
代理全新原装现货,价格优势
Micron Technology Inc.
24+
63-VFBGA(9x11)
56200
一级代理/放心采购
ST/意法
22+
BGA
20000
保证原装正品,假一陪十
MICRON
20+
BGA-63
1001
就找我吧!--邀您体验愉快问购元件!

NUMONYX相关电路图

  • Nuvoton
  • NVE
  • NVENT
  • NVIDIA
  • nxp
  • NYLENE
  • O2Micro
  • ODU
  • OENINDIA
  • OHHALLSENSOR
  • OHMITE
  • OKAYA

numonyx

中文资料: 4589条

Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产