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NAND512R3A2C中文资料

厂家型号

NAND512R3A2C

文件大小

1270.65Kbytes

页面数量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

IC FLASH 512MBIT 63VFBGA

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

NUMONYX

NAND512R3A2C数据手册规格书PDF详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

NAND512R3A2C产品属性

  • 类型

    描述

  • 型号

    NAND512R3A2C

  • 功能描述

    IC FLASH 512MBIT 63VFBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 产品变化通告

    Product Discontinuation 26/Apr/2010

  • 标准包装

    136

  • 系列

    - 格式 -

  • 存储器

    RAM

  • 存储器类型

    SRAM - 同步,DDR II

  • 存储容量

    18M(1M x 18)

  • 速度

    200MHz

  • 接口

    并联

  • 电源电压

    1.7 V ~ 1.9 V

  • 工作温度

    0°C ~ 70°C

  • 封装/外壳

    165-TBGA

  • 供应商设备封装

    165-CABGA(13x15)

  • 包装

    托盘

  • 其它名称

    71P71804S200BQ

更新时间:2025-10-25 16:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
2023+
BGA
53500
正品,原装现货
NUMONYX
21+
BGA
10000
原装现货假一罚十
Numonyx/STMi
23+
63-VFBGA
65480
ST
25+
BGA
6500
十七年专营原装现货一手货源,样品免费送
ST(意法)
24+
N/A
8048
原厂可订货,技术支持,直接渠道。可签保供合同
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
ST
24+
BGA
598000
原装现货假一赔十
Micron
22+
63VFBGA (9x11)
9000
原厂渠道,现货配单
MICRON/美光
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST/意法
2023+
BGA
6893
十五年行业诚信经营,专注全新正品