General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated

in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature

independent capacitive turn-off, zero recovery switching behavior combined with an outstanding

figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness

expressed in a high IFSM.

Features and benefits

• Reduced system cost

• Temperature independent fast and smooth switching performance

• Outstanding figure of merit (Qc

x VF)

• High IFSM capability

• High power density

• Reduced system costs

• System miniaturization

• Reduced EMI

Applications

• Switch mode power Supply (SMPS)

• AC-DC and DC-DC converter

• Battery charging infrastructure

• Server and telecom power supply

• Uninterruptible power supply (UPS)

• Photovoltaic inverters