1. General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated

in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package

offers temperature independent capacitive turn-off, zero recovery switching behavior combined

with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the

robustness expressed in a high IFSM.

2. Features and benefits

• Zero forward and reverse recovery

• Temperature independent fast and smooth switching performance

• Outstanding figure of merit (Qc

x VF)

• High IFSM capability

• High power density

• Reduced system costs

• System miniaturization

• Reduced EMI

3. Applications

• Switch mode power Supply (SMPS)

• AC-DC and DC-DC converter

• Battery charging infrastructure

• Server and telecom power supply

• Uninterruptible power supply (UPS)

• Photovoltaic inverters