1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted

Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Extended temperature range Tj = 175 °C

• Trench MOSFET technology

• Very fast switching

• ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)

• AEC-Q101 qualified

3. Applications

• DC to DC conversion

• High-speed line driver

• Low-side load switch

• Switching circuits