1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Trench MOSFET technology

• Side wettable flanks for optical solder inspection

• ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)

• AEC-Q101 qualified

3. Applications

• Relay driver

• High-speed line driver

• Low-side load switch

• Switching circuits