1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Very low threshold voltage for portable applications: VGS(th) = 0.7 V

• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

• ElectroStatic Discharge (ESD) protection > 1 kV HBM

3. Applications

• Relay driver

• High-speed line driver

• Level shifter

• Power management in battery-driven portables