1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra

small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

3. Applications

• Relay driver

• High-speed line driver

• Level shifter

• Power management in battery-driven portables