1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power

plastic package.

NPN complement: PHPT60610NY

2. Features and benefits

• High thermal power dissipation capability

• High temperature applications up to 175 °C

• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• AEC-Q101 qualified.

3. Applications

• Power management

• Load switch

• Linear mode voltage regulator

• Backlighting applications

• Motor drive

• Relay replacement