1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT60606NY.

2. Features and benefits

• High thermal power dissipation capability

• Suitable for high temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

3. Applications

• Power management

• Load switch

• Linear mode voltage regulator

• Backlighting applications

• Motor drive

• Relay replacement