1. General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an

ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

PNP complement: PBSS5330PA.

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

• Exposed heat sink for excellent thermal and electrical conductivity

• Leadless small SMD plastic package with medium power capability

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)