General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• High temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) area requirements

• Leadless small SMD plastic package with soldarable side pads

• Exposed heat sink for excellent thermal and electrical conductivity

• Suitable for Automatic Optical Inspection (AOI) of solder joint

• AEC-Q101 qualified

Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)