General description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP/PNP complement: PBSS5220PAPS

Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• Exposed heat sink for excellent thermal and electrical conductivity

• High energy efficiency due to less heat generation

• Suitable for Automatic Optical Inspection (AOI) of solder joints

• AEC-Q101 qualified

Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• LED lighting

• Power switches (e.g. motors, fans)