1. General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and

flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4021PX.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)