General description

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

NPN complement: PBSS2540E.

Features

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability: IC and ICM

■ High collector current gain (hFE) at high IC

■ High efficiency due to less heat generation

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications

■ DC-to-DC conversion

■ MOSFET gate driving

■ Motor control

■ Charging circuits

■ Low power switches (e.g. motors, fans)