1. General description

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted

package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT

H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and

performance.

2. Features and benefits

• Simplified driver design as standard level MOSFET gate drivers can be used:

• 0 V to 12 V drive voltage

• Gate threshold voltage VGSth of 4 V

• Robust gate oxide with ±20 V VGS rating

• High gate threshold voltage of 4 V for gate bounce immunity

• Low body diode Vf for reduced losses and simplified dead-time adjustments

• Transient over-voltage capability for increased robustness

• CCPAK package technology:

• Improved reliability, with reduced Rth(j-mb) for optimal cooling

• Lower inductances for lower switching losses and EMI

• 175 °C maximum junction temperature

• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike

traditional QFN packages

• Visual (AOI) soldering inspection, no need for expensive x-ray equipment

• Easy solder wetting for good mechanical solder joints

3. Applications

• Hard and soft switching converters for industrial and datacom power

• Bridgeless totempole PFC

• PV and UPS inverters

• Servo motor drives