Symbol Item Reference Ratings Unit
I T （RMS） R.M.S. On-State Current
I TSM Surge On-State Current
Tc＝98℃
One cycle， 50Hz/60Hz， Peak value non-repetitive
I 2 t I 2 t（for fusing）
P GM Peak Gate Power Dissipation
P G（AV） Average Gate Power Dissipation
I GM Peak Gate Current
V GM Peak Gate Voltage
A
155/170 A
120
5
A 2 S
W
0.5
Tj Operating Junction Temperature
Tstg Storage Temperature
Mass
2
W
A
10 V
－40～＋125 ℃
－40～＋150 ℃
2 g
Symbol Item Reference
Ratings
Min. Typ. Max.
Unit
I DRM Repetitive Peak Off-State Current
V TM Peak On-State Voltage
V D =V DRM ， Single phase， half wave， Tj＝125℃
I T ＝25A， Inst. measurement
I
＋
GT1 1
2
3
4
Gate Trigger Current
I
－
GT1
I
＋
GT3
I
－
GT3
V GD Non-Trigger Gate Voltage
V D ＝6V，R L ＝10Ω
mA
V
mA
0.2
10
25
2
1.4
30
30
―
30
1.5
1.5
―
1.5
1.4
V
＋
GT1 1
2
3
4
Gate Trigger Voltage
V
－
GT1
V
＋
GT3
V
－
GT3
V
Tj＝125℃，V D ＝ 1 ／ 2 V DRM
〔dv / dt〕c
Critical Rate of Rise of Off-State
Voltage at Commutation
I H Holding Current
Rth Thermal Resistance
Tj＝125℃，〔di/dt〕c＝ － 8A/ms，V D ＝400V
Junction to case
V
V/μs
mA
℃/W
