供应NEXPERIA品牌 BAT54S 原装现货联系QQ1640951075

时间:2020-12-11 11:05:00

供应NEXPERIA品牌 BAT54S 原装现货

BAT54 / A / C / S

200m Watts Surface Mount Schottky Barrier Diode

SOT-23

0.020(0.51)

0.015(0.37)

Features 0.055(1.40) 0.098(2.50)

0.047(1.19) 0.083(2.10)

Low turn-on voltage

Fast switching 0.080(2.05) 0.041(1.05)

PN junction guard ring for transient and_ESD 0.070(1.78) 0.047(0.89)

protection 0.024(0.61)

0.018(0.45)

Mechanical Data

0.120(3.05)

Case: SOT-23, Molded plastic 0.104(2.65)

Terminals: Solderable per MIIL-STD-202,

0.043(1.10)

Method 208 0.035(0.89)

Marking & Polarity: See diagram

0.006(0.15) 0.024(0.61) 0.007(0.178)

Weight: 0.008 gram (approx.) 0.001(0.013) 0.018(0.45) 0.003(0.076)

Dimensions in inches and_(millimeters)

BAT54 Marking: KL1 BAT54AMarking: KL2 BAT54C Marking: KL3 BAT54S Marking:KL4

Maximum Ratings TA=25 oC unless otherwise specified

Type Number Symbol Value Units

Peak Repetitive Reverse Voltage VRRM

Working Peak Reverse Voltage

DC Blocking Voltage VRWM 30 V

VR

Forward Continuous Current IF 200 mA

Repetitive Peak Forward Current IFM 300 mA

Forward Surge Current @ t=1.0s IFSM 600 mA

Power Dissipation (Note 1) Pd 200 mW

Thermal Resistance Junction to Ambient Air RJA 500 oC/W

Operating and_Storage Temperature Range TJ, TSTG -65 to + 125 oC

Electrical Characteristics

Type Number Symbol Min Typ Max Units

Reverse Breakdown Voltage (Note 1) V(BR)R 30 - - V

Reverse Leakage Current (Note 1) VR=25V IR uA

- -- 2.0

mV

Forward Voltage (Note1) IF=0.1mA 240

pF

IF=1.0mA 320 nS

IF= 10mA VF - -- 400

IF = 30mA 500

IF=100mA 1000

Junction Capacitance VR=0, f=1.0MHz Cj - 10

Reverse Recovery Time (Note 2) trr - 5.0

Notes: 1. Short Duration Pulse Test used to Minimize Self-Heating Effect.

2. Reverse Recovery Test Conditions: IF=10mA through IR=10mA to IR=1.0mA, RL=100.

Version: A06

RATINGS AND CHARACTERISTIC CURVES (BAT54 / A / C / S)

FIG.1- POWER DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE PEAK

200 FORWARD SURGE CURRENT PER LEG

700

PD, POWER DISSIPATION (mW) PEAK FORWARD SURGE CURRENT. (mA) 600

8.3ms Single Half Sine Wave

500 (JEDEC Method)

400

100 300

200

100

0 0 1

0 25 50 75 100 125 2 5 10 20 50 100

TA, AMBIENT TEMPERATURE ( C) NUMBER OF CYCLES AT 60Hz

FIG.3- TYPICAL FORWARD CHARACTERISTICS FIG.4- TYPICAL REVERSE CHARACTERISTICS

1000 1000

V R=25V

INSTANTANEOUS FORWARD CURRENT (mA) 100 100

OC IR, LEAKAGE CURRENT ( A)

10 +100 10

T =

J = +125 OC

T OC

J

+25

= OC

T -25

J

=

T

J

1 1

0.1 0.1

0

0 100 200 300 400 500 600 50 100 150

Tj, INSTANTANEOUS FORWARD VOLTAGE (mV) Tj, JUNCTION TEMPERATURE ( C)

FIG.5- TYPICAL TOTAL CAPACITANCE VS FIG.6- TYPICAL TRANSIENT THERMAL

REVERSE VOLTAGE CHARACTERISTICS

100

f = 1.0MHz TRANSIENT THERMAL IMPEDANCE. (OC/W)

10

JUNCTION CAPACITANCE (pF) 10

5

1

0 0.1

0 5 10 15 20 0.01 0.1 1 10 100

REVERSE VOLTAGE PULSE DURATION. (sec)

型号查询 功能描述 生产厂家&企业 LOGO 操作

Surface mount Schottky-Barrier Single-/ Double-Diodes

DiotecDiotec Semiconductor

德欧泰克

250mWatt, 30Volt Schottky Barrier Diode

MCC

Micro Commercial Components

SURFACE MOUNT SCHOTTKY BARRIER DIODE

DIODESDiodes Incorporated

美台半导体

Schottky Diodes

GE

General Semiconductor

Schottky Barrier Diode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DUAL SURFACE MOUNT SCHOTTKY

RECTRONRectron Semiconductor

丽正国际丽正国际科技股份有限公司

SCHOTTKY BARRIER DIODE

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

SILICON EPITAXIAL SCHOTTKY BARRIER DIODES

Zetex

Zetex Semiconductors

SMALL SIGNAL SCHOTTKY DIODE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

Schottky barrier double diodes

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

2025-9-30 11:25:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
25+
SOT23
45896
ST/意法全新特价BAT54SFILM即刻询购立享优惠#长期有货
FAIRCHILD
01+
SOT23/
4370
全新原装进口自己库存优势
ST
24+
SOT323
8950
BOM配单专家,发货快,价格低
ON
25+
SOT-23
300000
深圳现货 原厂原装 假一赔十
23+
SMD
618000
明嘉莱只做原装正品现货
SR台湾产
23+
SMB
5600
绝对全新原装!优势供货渠道!特价!请放心订购!
恩XP
24+
SOT-23
57200
新进库存/原装
IR
24+
SOT-23
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
FAIRCHILD
000
2008
3
原厂原装
PANJIT
19+
SOT323
30000

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