1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS

文件：160.91 Kbytes Page：4 Pages

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS

文件：161.78 Kbytes Page：4 Pages

2.5 V to 5.5 V, 500 uA, Parallel Interface Quad Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5334/AD5335/AD5336/AD5344 are quad 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 500 µA at 3 V, and feature a power-down mode that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can drive

Power supply unit for LCD drives

Power supply unit for LCD drives The BP5311 is a DC-DC converter unit for supplying power to liquid crystal display (LCD) panels. The unit supplies a positive voltage for LCDs from a logic circuit power supply (+5V) Features 1) High conversion efficiency. 2) Built-in protection circuit. 3) Bu

Variable Drivided Voltage Generator for LCD

Overview The LA5311M is a variable divided voltage generator IC for multiple drive of LCD matrix. Features • Power supply for variable bias LCD drive. • 4 operational amplifiers deliver 4 voltage outputs. • Low current drain (1.0mA max). • Miniflat package.

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. Thes

Single Phase Bridge Rectifier 4 Amp

Features: ● Ideal for Printed Circuit Board ● Surge Overload Rating: 200A (Peak)