NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE

DESCRIPTION NEC’s NX5306 series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) systems, long haul STM-1 (L-1.1), short haul STM-4 (S-4.1), and ITU-T recommendations. FEATURE

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy

NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

文件：231.84 Kbytes Page：7 Pages

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy

NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE

DESCRIPTION NEC’s NX5306 series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) systems, long haul STM-1 (L-1.1), short haul STM-4 (S-4.1), and ITU-T recommendations. FEATURE

NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE

DESCRIPTION NEC’s NX5306 series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) systems, long haul STM-1 (L-1.1), short haul STM-4 (S-4.1), and ITU-T recommendations. FEATURE

LASER DIODE

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

文件：231.84 Kbytes Page：7 Pages

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

文件：231.84 Kbytes Page：7 Pages

2.5 V to 5.5 V, 230uA, Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5332/AD5333/AD5342/AD5343 are dual 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 230 µA at 3 V, and feature a power-down pin, PD that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can dr

2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5330/AD5331/AD5340/AD53411 are single 8-/10-/12- bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 115 μA at 3 V and feature a power-down mode that further reduces the current to 80 nA. The devices incorporate an on-chip output buffer that can drive the

CURRENT REGULATOR CHIPS

• 1N5283 THRU 1N5314 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/463 • CURRENT REGULATOR CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5283 THRU 1N5314 • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATT

CURRENT REGULATOR DIODES

• 1N5283UR-1 THRU 1N5314UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/463 • CURRENT REGULATOR DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

JIGH RELIABILITY CURRENT REGULATOR DIODES

HIGH RELIABILITY CURRENT REGULATOR DIODES