MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single, N-Channel,

MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

文件：280.53 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

文件：280.53 Kbytes Page：7 Pages