MOSFET – Power, Single N-Channel 40 V, 2.2 m, 142 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS002N04CL − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single N-Channel 40 V, 2.4 m, 136 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS002N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

功率 MOSFET，40 V，2.0 Ω，142 A，单 N 沟道

MOSFET – Power, Single N-Channel 40 V, 2.4 m, 136 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS002N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 40 V, 2.4 m, 136 A

文件：280.27 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 40 V, 2.2 m, 142 A

文件：363.28 Kbytes Page：9 Pages

MOSFET ??Power, Single, N-Channel 40 V, 2.2 m, 142 A

文件：363.28 Kbytes Page：9 Pages

MOSFET ??Power, Single, N-Channel 40 V, 2.4 m, 136 A

文件：280.27 Kbytes Page：7 Pages