60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench techno logy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. NVR5198NL General Features VDS = 60V ID =3A RDS(ON)

N?묬hannel Logic Power MOSFET

文件：132.22 Kbytes Page：6 Pages

Power MOSFET

文件：116.34 Kbytes Page：6 Pages

Power MOSFET

文件：116.34 Kbytes Page：6 Pages

N?묬hannel Logic Power MOSFET

文件：132.22 Kbytes Page：6 Pages

N?묬hannel Logic Power MOSFET

文件：132.22 Kbytes Page：6 Pages

Power MOSFET

文件：116.34 Kbytes Page：6 Pages

POWER TRANSISTORS

POWER TRANSISTORS Power Amplifier Applications. TO- 3PN Non Isolated Plastic Package

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

POWER TRANSISTORS

POWER TRANSISTORS Power Amplifier Applications. TO- 3PN Non Isolated Plastic Package

22 (7/30) AWG Tinned Copper

文件：412.4 Kbytes Page：4 Pages

RF AMPLIFIER MODEL

文件：37.35 Kbytes Page：1 Pages