MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

功率 MOSFET，60 V，2.0Ω，185 A，单 N 沟道

MOSFET ??Power, Single N-Channel 60 V, 2.0 m, 185 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single, N-Channel

Features  Small Footprint (5x6 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  LFPAK4 Package, Industry Standard  These Devices are Pb−Free and are RoHS Compliant