MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

功率 MOSFET 40 V，1.1 mΩ，258 A，单 N 沟道

丝印代码：1D2N04CL；MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Power MOSFET 40 V, 1.2 m, 237 A, Single N?묬hannel

文件：356.69 Kbytes Page：7 Pages

丝印代码：1D2N04CL；Power MOSFET 40 V, 1.2 m, 237 A, Single N?묬hannel

文件：356.69 Kbytes Page：7 Pages