MOSFET – Power, Single N-Channel 60 V, 15 m, 37 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

功率 MOSFET，60 V，14.5Ω，42 A，单 N 沟道

丝印代码：014N06CL；MOSFET – Power, Single N-Channel 60 V, 15 m, 37 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

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文件：1.02174 Mbytes Page：2 Pages

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丝印代码：014N06NT；OptiMOSTM Power-Transistor, 60 V

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New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages