MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Single N-Channel Power MOSFET 150V, 165A, 4.45mΩ

MOSFET ??Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：4D3N15MC；MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 174 A

文件：298.49 Kbytes Page：8 Pages

丝印代码：4D3N15M；MOSFET - Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 174 A

文件：406.01 Kbytes Page：7 Pages