MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Single N-Channel Power MOSFET 100V, 273A, 1.7mΩ

丝印代码：1D6N10MC；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes Page：8 Pages

丝印代码：1D6N10MC；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

文件：331.37 Kbytes Page：8 Pages

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A

文件：262.66 Kbytes Page：7 Pages

丝印代码：1D6N10M；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 267 A

文件：262.66 Kbytes Page：7 Pages