丝印代码：NVMTS1D2N08H；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 337 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ

丝印代码：BGS1D2N08H；MOSFET - Power, Single N-Channel, D2PAK7 80 V, 1.34 m, 290 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualification • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

丝印代码：NTMTS1D2N08H；MOSFET - Power, Single N-Channel 80 V, 1.1 m, 335 A

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