MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

单 N 沟道，功率 MOSFET，60V，447A，0.68mΩ

MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.75 m, 470 A

文件：389.85 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel, DFNW8 60 V, 0.72 m, 464 A

文件：402.8 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

文件：401.4 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

文件：401.4 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel, DFNW8 60 V, 0.72 m, 464 A

文件：402.8 Kbytes Page：7 Pages