MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

单 N 沟道，功率 MOSFET，60V，447A，0.68mΩ

丝印代码：0D7N06CL；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

丝印代码：0D7N06C；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

MOSFET - Power, Single N-Channel, TOLL 60 V, 0.75 m, 470 A

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