MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

功率 MOSFET， 60 V，1.4Ω，220 A，单 N 沟道

MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single N-Channel 60 V, 1.49 m, 198 A NVMJST1D4N06CL

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

文件：374.7 Kbytes Page：7 Pages

MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

文件：374.7 Kbytes Page：7 Pages