MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

MOSFET - Power, Single N-Channel, TOLL 80 V, 1.53 m, 298 A

文件：461.8 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 80 V, 1.5 m, 255 A

文件：475.82 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel, DFNW8 80 V, 1.56 m, 287 A

文件：412.23 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL 80 V, 1.56 m, 287 A

文件：418.28 Kbytes Page：7 Pages